silicon solar panels, electrical parameters, conversion efficiency, gamma radiation
The performance of the silicon solar panels are analyzed by calculating their different electrical parameters. The external parameters like short circuit current, open circuit voltage, maximum power point, fill factor, conversion efficiency are calculated experimentally before and after radiation. The internal parameters like series resistance, shunt resistance, photo generation current, saturation current and ideality factor are discussed before and after radiation. The effect of radiation on the short circuit current and solar panel conversion efficiency has been observed experimentally. The external parameters are calculated from the C-V characteristics curve of the solar panels for different radiations while considering the solar panel and the environmental temperature nearly constant. Plots of current voltage have been drawn in both dark and light conditions and the parameters are abstracted from the corresponding graphs and are analyzed using theoretical modeling. A simple dark I-V measurement produces the exponential change and it was concluded that the solar panels irradiated with Gamma rays became more powerful and radiation more then 10 Mrad burn/degrade a lot.