 | Clean Technology 2007
Technical Proceedings of the 2007 Clean Technology Conference and Trade Show
Chapter 3: Emissions, and Environmental |
| | Novel FD SOI Devices Structure for Low Standby Power Applications | | Authors: | M-W Ma, T-S Chao, K-S Kao, J-S Huang and T-F Lei | | Affilation: | National Chiao Tung University, TW | | Pages: | 122 - 125 | | Keywords: | S/D extension shift, high-k offset spacer, fringing electric field, SOI | | Abstract: | In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby power dissipation, but Ion is also decreasing simultaneously. In order to overcome this disadvantage, the high-k offset spacer is used to increase Ion effectively due to the enhanced vertical fringing electric field. Consequently, a FD SOI device with 8nm S/D extension shift and TiO2 offset spacer can possess high Ion and ultra-low Ioff about 0.003 times lower than conventional SOI structure. |  | This paper is available to CTSI members in PDF© format. | | ISBN: | 1-4200-6382-0 |
| Pages: | 338 |
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| Indexes: | Keywords, Authors, Affiliations |
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