Technical Proceedings of the 2007 Clean Technology Conference and Trade Show

Clean Technology 2007

Chapter 3: Emissions, and Environmental

Authors:
M-W Ma, T-S Chao, K-S Kao, J-S Huang and T-F Lei
Affilation:
National Chiao Tung University, TW
Pages:
122 - 125
Keywords:
S/D extension shift, high-k offset spacer, fringing electric field, SOI
Abstract:
In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby power dissipation, but Ion is also decreasing simultaneously. In order to overcome this disadvantage, the high-k offset spacer is used to increase Ion effectively due to the enhanced vertical fringing electric field. Consequently, a FD SOI device with 8nm S/D extension shift and TiO2 offset spacer can possess high Ion and ultra-low Ioff about 0.003 times lower than conventional SOI structure.
Novel FD SOI Devices Structure for Low Standby Power Applications
ISBN:
1-4200-6382-0
Pages:
338